Kuenzaniswa nesilicon-based power semiconductors, SiC (silicon carbide) simba semiconductors ine zvakakosha mukuchinja frequency, kurasikirwa, kupisa kupisa, miniaturization, nezvimwe.
Nekugadzirwa kwakakura kwesilicon carbide inverters naTesla, mamwe makambani atangawo kugadzira zvigadzirwa zvesilicon carbide.
SiC "inoshamisa", sei pasi pano yakagadzirwa? Ndeapi maapplication izvozvi? Ngationei!
01 ☆ Kuzvarwa kweSiC
Kufanana nemamwe magetsi semiconductors, iyo SiC-MOSFET indasitiri chain inosanganisiraiyo refu crystal - substrate - epitaxy - dhizaini - kugadzira - yekurongedza link.
Kirista refu
Munguva yakareba yekristaro link, kusiyana nekugadzirira kweTira nzira inoshandiswa nesilicon imwe chete yekristaro, silicon carbide inonyanya kutora nzira yekufambisa gasi (PVT, inozivikanwawo seyakagadziridzwa Lly kana seed crystal sublimation method), yakakwirira tembiricha kemikari gasi deposition nzira (HTCVD). ) zvinowedzera.
☆ Core nhanho
1. Carbonic yakasimba mbishi zvinhu;
2. Mushure mekupisa, iyo carbide yakasimba inova gasi;
3. Gasi rinofamba pamusoro pekristaro yembeu;
4. Gasi rinokura pamusoro pekristaro yembeu kuita kristaro.
Mufananidzo kunobva: "Technical Point yekuparadzanisa PVT kukura silicon carbide"
Hunyanzvi hwakasiyana hwakakonzera zvikanganiso zviviri zvakakura zvichienzaniswa nesilicon base:
Kutanga, kugadzirwa kwakaoma uye goho rakaderera.Tembiricha yekabhoni-yakavakirwa gasi chikamu inokura pamusoro pe2300 ° C uye kudzvanywa kuri 350MPa. Bhokisi rose rakasviba rinoitwa, uye zviri nyore kusanganisa kuita tsvina. Goho rakaderera pane silicon base. Iyo yakakura dhayamita, iyo yakaderera goho.
Chechipiri kukura kunononoka.Iyo Governance yePVT nzira inononoka, kumhanya kunenge 0.3-0.5mm / h, uye inogona kukura 2cm mumazuva manomwe. Iyo yakawanda inogona chete kukura 3-5cm, uye dhayamita yekristaro ingot inowanzoita 4 inches uye 6 inches.
Iyo Silicon-yakavakirwa 72H inogona kukura kusvika pahurefu hwe2-3m, ine madhayamita kazhinji masendimita matanhatu uye 8-inch nyowani yekugadzira yegumi nemaviri inches.Naizvozvo, silicon carbide inowanzonzi crystal ingot, uye silicon inova danda rekristaro.
Carbide silicon crystal ingots
Substrate
Mushure mokunge crystal yakareba yapera, inopinda mukugadzirwa kwe substrate.
Mushure mekucheka kwakanangwa, kukuya (kukuya, kugaya zvakanaka), kukwenenzvera (mechanical polishing), Ultra-precision polishing (chemical mechanical polishing), iyo silicon carbide substrate inowanikwa.
Iyo substrate inonyanya kutambabasa rekutsigira muviri, thermal conductivity uye conductivity.Iyo yakaoma yekugadzirisa ndeyekuti iyo silicon carbide zvinhu yakakwira, crispy, uye yakagadzikana mumakemikari zvinhu. Naizvozvo, echinyakare silicon-yakavakirwa nzira dzekugadzirisa hadzina kukodzera silicon carbide substrate.
Hunhu hwekucheka hunoita hunokanganisa zvakananga kuita uye kushandiswa kwekushandisa (mutengo) wesilicon carbide zvigadzirwa, saka inodiwa kuve diki, yunifomu ukobvu, uye yakaderera kucheka.
Parizvino,4-inch uye 6-inch inonyanya kushandisa multi-line yekucheka michina,kucheka makristasi esilicon kuita zvidimbu zvitete zvine ukobvu husingapfuure 1mm.
Multi-line yekucheka dhizaini
Mune ramangwana, nekuwedzera kwehukuru hwekabhoni silicon wafers, kuwedzera kwezvinodiwa zvekushandisa zvinhu kuchawedzera, uye matekinoroji akadai selaser slicing uye kutonhora kuparadzaniswa kuchaiswawo zvishoma nezvishoma.
Muna 2018, Infineon yakawana Siltectra GmbH, iyo yakagadzira nzira yekuvandudza inozivikanwa sekutonhora kuputsa.
Kuenzaniswa neyechinyakare yakawanda-waya yekucheka maitiro kurasikirwa kwe1/4,iyo inotonhora yekupwanya maitiro yakangorasika 1/8 yesilicon carbide zvinhu.
Extension
Sezvo iyo silicon carbide zvinhu zvisingakwanisi kugadzira magetsi emagetsi zvakananga pane substrate, michina yakasiyana inodiwa pane yekuwedzera layer.
Naizvozvo, mushure mekugadzirwa kweiyo substrate kwapera, imwe chaiyo yekristaro yakaonda firimu inokura pane substrate kuburikidza nekuwedzera maitiro.
Parizvino, iyo kemikari gasi deposition nzira (CVD) process inonyanya kushandiswa.
Design
Mushure mekunge substrate yagadzirwa, inopinda muchikamu chekugadzira chigadzirwa.
Kune MOSFET, chinotariswa chekugadzira dhizaini dhizaini yegorofu,kune rumwe rutivi kudzivirira kukanganisa patent(Infineon, Rohm, ST, nezvimwewo, vane patent dhizaini), uye kune rumwe rutivikuzadzisa manufacturability uye mutengo wekugadzira.
Kugadzirwa kwewafer
Mushure mekugadzirwa kwechigadzirwa kwapera, inopinda muchikamu chekugadzira wafer,uye maitiro acho akafanana neaya esilicon, ayo anonyanya kuve nematanho mashanu anotevera.
☆ Nhanho 1: Jekiseni mask
Iyo firimu yesilicon oxide (SiO2) inogadzirwa, iyo photoresist yakaputirwa, iyo photoresist pateni inoumbwa kuburikidza nematanho ehomogenization, kuratidzwa, kukura, nezvimwewo, uye chimiro chinotamirwa kune iyo oxide firimu kuburikidza nekuita etching.
☆ Nhanho 2: Ion kuisirwa
Iyo yakafukidzwa silicon carbide wafer inoiswa mune ion implanter, umo maion ealuminium anoiswa jekiseni kuti agadzire P-type doping zone, uye anonamirwa kuti avhure maion aruminiyamu akaiswa.
Iyo oxide firimu inobviswa, maion enitrogen anopinzwa munzvimbo chaiyo yeP-type doping region kuti iite N-type conductive nharaunda yemugero nekwakabva, uye maioni enitrogen anodyarwa anovharirwa kuti ashande.
☆ Nhanho 3: Gadzira grid
Gadzira grid. Munzvimbo iri pakati pechitubu nekudonhedza, gedhi oxide layer inogadzirirwa neyakakura tembiricha oxidation process, uye gedhi electrode layer inoiswa kuti igadzire gedhi rekudzora chimiro.
☆ Nhanho 4: Kuita passivation layer
Passivation layer inogadzirwa. Deposit a passivation layer ine yakanaka insulation maitiro kudzivirira kuparara kwe interelectrode.
☆ Nhanho 5: Gadzira drain-source electrodes
Gadzira drain uye sosi. Iyo passivation layer ine perforated uye simbi inopwanyika kuita mudonzvo uye sosi.
Mufananidzo Kunobva: Xinxi Capital
Kunyangwe paine musiyano mudiki pakati peyero yemaitiro uye silicon yakavakirwa, nekuda kwehunhu hwesilicon carbide zvinhu,ion implantation uye annealing inoda kuitirwa munzvimbo yakanyanya tembiricha(kusvika ku1600 ° C), tembiricha yakakwira ichakanganisa chimiro chelattice yechinhu chacho, uye kuoma kunokanganisawo goho.
Mukuwedzera, kune zvikamu zveMOSFET,kunaka kwegedhi okisijeni kunokanganisa zvakananga kufamba kwechiteshi uye kuvimbika kwegedhi, nekuti kune marudzi maviri esilicon nekabhoni maatomu musilicon carbide zvinhu.
Naizvozvo, inokosha gedhi svikiro kukura nzira inodiwa (imwe pfungwa ndeyokuti nesilicon carbide pepa iri pachena, uye chinzvimbo alignment panguva photolithography padanho zvakaoma nesilicon).
Mushure mekugadzira wafer kwapera, iyo yega chip inochekwa kuita isina chip uye inogona kuiswa mukati zvichienderana nechinangwa. Iyo yakajairika maitiro e discrete zvishandiso ndeye TO package.
650V CoolSiC™ MOSFETs mune TO-247 package
Mufananidzo: Infineon
Munda wemotokari une simba rakawanda uye zvinodikanwa zvekupisa kupisa, uye dzimwe nguva zvinodikanwa kuvaka zvakananga mabhiriji maseketi (hafu bhiriji kana zambuko rakazara, kana kurongedzerwa zvakananga nema diode).
Naizvozvo, inowanzo kurongedzerwa zvakananga mumamodule kana masisitimu. Zvinoenderana nehuwandu hwemachipisi akaiswa mune imwechete module, iyo yakajairika fomu 1 mu1 (BorgWarner), 6 mu1 (Infineon), nezvimwewo, uye mamwe makambani anoshandisa imwechete-chubhu parallel chirongwa.
Borgwarner Viper
Inotsigira kutonhora kwemvura yakapetwa kaviri uye SiC-MOSFET
Infineon CoolSiC™ MOSFET modules
Kusiyana nesilicon,silicon carbide modules inoshanda pane tembiricha yepamusoro, inenge 200 ° C.
Traditional nyoro solder tembiricha melting point tembiricha yakaderera, haigone kusangana nezvinodiwa tembiricha. Naizvozvo, silicon carbide modules anowanzo shandisa yakaderera-tembiricha sirivha sintering welding process.
Mushure mekunge module yapera, inogona kuiswa kune zvikamu system.
Tesla Model3 mota controller
Iyo isina chip inobva kuST, yakazvigadzira pasuru uye yemagetsi drive system
☆02 Mamiriro ekushandisa eSiC?
Mumunda wemotokari, zvishandiso zvemagetsi zvinonyanya kushandiswa mukatiDCDC, OBC, motor inverters, electric air conditioning inverters, wireless charger nezvimwe zvikamu.izvo zvinoda AC/DC kukurumidza kutendeuka (DCDC inonyanya kuita sechimbi chimbi).
Mufananidzo: BorgWarner
Kuenzaniswa nesilicon-based materials, SIC zvinhu zvine yakakwirirayakakosha avalanche breakdown field simba(3×106V/cm),nani thermal conductivity(49W/mK) uyewider band gap(3.26eV).
Iyo yakakura gap yebhendi, iyo idiki iyo inodonha yezvino uye inokwirisa kushanda kwayo. Izvo zviri nani thermal conductivity, iyo yakakwirira yezvino density. Iyo yakasimba iyo yakakosha avalanche yekuputsa munda ndeye, iyo voltage kuramba yemudziyo inogona kuvandudzwa.
Naizvozvo, mumunda we-on-board high voltage, MOSFETs uye SBD yakagadzirirwa nesilicon carbide zvinhu kutsiva iripo silicon-based IGBT uye FRD musanganiswa unogona kunyatso kuvandudza simba uye kushanda nesimba.kunyanya mune yakakwirira frequency application mamiriro ekudzikisa kurasikirwa kwekuchinja.
Parizvino, ingangoita yekuwana yakakura-chiyero kunyorera mumamotor inverters, ichiteverwa neOBC neDCDC.
800V voltage papuratifomu
Mune 800V voltage papuratifomu, mukana weiyo yakakwira frequency inoita kuti mabhizinesi awedzere kuda kusarudza SiC-MOSFET mhinduro. Naizvozvo, mazhinji eazvino 800V emagetsi ekudzora kuronga SiC-MOSFET.
Platform-level kuronga kunosanganisirayemazuva ano E-GMP, GM Otenergy - pikicha munda, Porsche PPE, uye Tesla EPA.Kunze kwePorsche PPE papuratifomu modhi isingatakure SiC-MOSFET (yekutanga modhi ndeye silica-based IGBT), mamwe mapuratifomu emotokari anotora zvirongwa zveSiC-MOSFET.
Universal Ultra simba chikuva
800V modhi kuronga yakawanda,iyo Great Wall Salon brand Jiagirong, Beiqi pole Fox S HI vhezheni, yakanaka mota S01 uye W01, Xiaopeng G9, BMW NK1, Changan Avita E11 akati kuti achatakura 800V papuratifomu, kuwedzera BYD, Lantu, GAC 'an, Mercedes-Benz, zero Run, FAW Red Flag, Volkswagen zvakare akati 800V michina pakutsvakurudza.
Kubva pamamiriro e800V maodha akawanikwa neTier1 vatengesi,BorgWarner, Wipai Technology, ZF, United Electronics, uye Huichuanzvese zvakaziviswa 800V yemagetsi drive maodha.
400V voltage papuratifomu
Mune 400V voltage papuratifomu, SiC-MOSFET inonyanya mukufunga kwesimba repamusoro uye kuwanda kwesimba uye kugona kwakanyanya.
Zvakadai seTesla Model 3\Y mota yave yakagadzirwa-zhinji ikozvino, simba repamusoro reBYD Hanhou mota ingangoita mazana maviri ekw (Tesla 202Kw, 194Kw, 220Kw, BYD 180Kw), NIO ichashandisawo SiC-MOSFET zvigadzirwa kutanga kubva kuET7. uye iyo ET5 inozonyorwa gare gare. Peak simba i240Kw (ET5 210Kw).
Pamusoro pezvo, kubva pakuona kwekushanda kwepamusoro, mamwe mabhizinesi ari kuongororawo kugona kweanobatsira mafashama eSiC-MOSFET zvigadzirwa.
Nguva yekutumira: Jul-08-2023
